Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs <italic> N</italic>mosfet with High-<italic>k</italic> Stacked Gate Dielectric

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

Mosfet Carrier Mobility Model Based on Gate Oxide Thickness, Threshold and Gate Voltages

Coulomb Scattering Induced Mobility Degradation in Ultrathin-body SOI MOSFETs with High-K Gate Stack

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack.

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Simulation Study of Channel Mobility and Device Performance Dependence on Gate Stack in Graphene Field-Effect Transistors

Remote Charge Scattering: a Full Coulomb Interaction Approach and Its Impact on Silicon Nmos FinFETs with HfO 2 Gate Dielectric

Numerical simulation study on electron mobility of independent DG MOSFETs

Estimation of Hole Mobility in Hydrogen-Terminated Diamond MOSFET with High-K Stacked Gate Dielectrics

An Assessment of the Mobility Degradation Induced by Remote Charge Scattering

Remote Phonon And Impurity Screening Effect Of Substrate And Gate Dielectric On Electron Dynamics In Single Layer Mos2

Electron Mobility in Surface- and Buried-Channel Flatband In0.53ga0.47as Mosfets with Ald Al2o3 Gate Dielectric

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs &lt;italic&gt; N&lt;/italic&gt;mosfet with High-&lt;italic&gt;k&lt;/italic&gt; Stacked Gate Dielectric

Simulation Study of Device Physics Issues in III&amp;#x2013;V MOSFETs at 10 Nm Node