Correction to “improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection” [aug 13 1050-1052]

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Hailiang Liang

DOI: https://doi.org/10.1109/led.2013.2275615

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:There is an error in Fig. 1 in the above-named letter [ibid., vol. 34, no. 8, pp. 1050-1052, Aug. 2013]. The corrected figure is published here.

What problem does this paper attempt to address?

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Hailiang Liang

DOI: https://doi.org/10.1109/led.2013.2265411

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:An improved low-voltage-triggered silicon-controlled rectifier is proposed for on-chip electrostatic discharge (ESD) protection in a 65-nm radio frequency CMOS. The experimental results show that it has a very low intrinsic capacitance of 18 fF at zero bias, a low and tunable trigger voltage in the range of 2.2-4.5 V, a low leakage current of 0.3 nA, and a low overshoot voltage under very fast ESD pulse. It achieves a 1.9-A failure current with only 50 x 9-mu m(2) layout area.
Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Zhiwei Liu,Juin J. Liou,Shurong Dong,Yan Han

DOI: https://doi.org/10.1109/led.2010.2050575

IF: 4.8157

2010-01-01

IEEE Electron Device Letters

Abstract:Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.
A novel straight through-MOS-triggered SCR for on-chip ESD protection

Jianfeng Zheng,Fei Ma,Yan Han,Hailian Liang,Shurong Dong,Jian Wu

2013-01-01

Abstract:A novel straightthrough-MOS-triggered silicon controlled rectifier (STSCR) and conventional MOS-triggered SCR(TSCR) for on-chip electrostatic discharge (ESD) protection are verified in a 0.13 μm CMOS process. TLP (Transmission-line-pulsing system) testing results for these two structures show that the novel straightthrough-MOS-triggered SCR structure possesses a lower trigger voltage, a smaller turn-on resistance, a faster turn-on efficiency and a higher failure current.
Correction: Li, S. Et Al. Research on a Power Management System for Thermoelectric Generators to Drive Wireless Sensors on a Spindle Unit. Sensors 2014, 14, 12701–12714

Sheng Li,Xinhua Yao,Jianzhong Fu

DOI: https://doi.org/10.3390/s150820541

IF: 3.9

2015-01-01

Sensors

Abstract:The authors wish to make the following corrections to this paper [1]. [...]
Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

Yong Zhu,Jitendra Pal

DOI: https://doi.org/10.3390/mi12111389

IF: 3.4

2021-11-12

Micromachines

Abstract:The authors would like to update the Figure 3 and Figure 7 to the published paper [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Meng Miao,Shurong Dong,Jian Wu,Jie Zeng,Juin J. Liou,Fei Ma,Hongwei Li,Yan Han

DOI: https://doi.org/10.1109/led.2012.2191930

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:The diode-triggered silicon-controlled rectifier (DTSCR) is frequently used for low-voltage electrostatic discharge (ESD) protection applications, but such a device can exhibit two snapbacks and consequently can possess an undesirable large trigger voltage. This letter investigates the mechanism underlying the DTSCR's multiple triggering. An improved DTSCR for reducing the second trigger voltage and increasing the ESD safe margin is proposed and verified in a 65-nm complementary metal-oxide-semiconductor process. The improved DTSCR's turn-on characteristic is also discussed.
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

F. Ma,Y. Han,S. Dong,B. Song,M. Miao,K. Zhu

DOI: https://doi.org/10.1049/el.2010.3524

2011-01-01

Electronics Letters

Abstract:Novel boundary-MOS-triggered SCR devices have been fabricated and investigated in 0.13 mu m CMOS process for on-chip ESD protection. Compared to conventional MOS-triggered SCRs with 50 mu m width, boundary-MOS-triggered SCR structures can achieve an adjustable trigger voltage as low as 3 V, a smaller turn-on resistance of 1.75 Omega, a shorter turn-on time of 4.5 ns and a higher failure current of 3.06 A, which make them superior ESD clamp devices for nanoscale CMOS ICs.
Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

f M,LIANG Hailian,DONG Shurong

DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.03.019

2013-01-01

Abstract:Based on the bi-directional silicon controlled rectifier(SCR),two novel electrostatic discharge(ESD) protection devices have been proposed,which can prevent ESD stresses on both the positive and the negative directions.While the conventional dual-direction SCR ESD protection device is usually triggered by the avalanche breakdown between N-well and P-well,the two proposed devices use the embedded NMOS/PMOS as the triggering structure to decrease the trigger voltage.Both the modified structures are implemented in a 0.18 μm RF CMOS process and examined by the transmission line pulse testing system.Experimental results indicate that the proposed devices have lower trigger voltage,smaller leakage current(~nA),a protection level passing 2 kV of human body model,and a high holding voltage(>3.3 V),making them immune to the latch-up in 1.8 V or 3.3 V I/O ESD protection applications.
Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Fei Ma,Yan Han,Bo Song,Shurong Dong,Meng Miao

DOI: https://doi.org/10.1109/ICCRD.2011.5764207

2011-01-01

Abstract:Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD robustness and sufficient latch-up immunity compared with other MOS-triggered SCRs.
Low-Capacitance SCR Structure for RF I/O Application

Shurong Dong,Meng Miao,Jian Wu,Jie Zeng,Zhiwei Liu,Juin J. Liou

DOI: https://doi.org/10.1109/temc.2012.2216271

IF: 2.036

2013-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.
Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang

DOI: https://doi.org/10.1109/led.2018.2810758

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:In the above paper, there is an error in the information of corresponding author’s email address. The corrected corresponding author’s email address information is provided.
Erratum to “Accurate Sub-Structure Characteristic Mode Analysis of Dielectric Resonator Antennas With Finite Ground Plane” [Oct 21 6930-6935]

Shaode Huang,Chao-Fu Wang,Jin Pan,Deqiang Yang

DOI: https://doi.org/10.1109/tap.2022.3155267

IF: 5.7

2022-04-01

IEEE Transactions on Antennas and Propagation

Abstract:In the above article [1], the title was written as: "Accurate Sub-Structure Characteristic Mode Analysis of Dielectric Resonator Antennas With Finite Ground Plan."

telecommunications,engineering, electrical & electronic
Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Jinsu Jeong,Jun-Sik Yoon,Sanguk Lee,Rock-Hyun Baek

DOI: https://doi.org/10.1109/ted.2024.3394728

IF: 3.1

2024-06-21

IEEE Transactions on Electron Devices

Abstract:In the above article [1], certain parts of Figs. 1 and 3 were either written incorrectly or missing. The proper figures are provided here.

engineering, electrical & electronic,physics, applied
Corrections to “improved Range Tunability of DFB Lasers Based on REC Technique under Injection Current” [apr 21 DOI: 10.1109/JQE.2021.3051426]

Ke Xu,Pan Dai,Zhenxing Sun,Jun Lu,Rulei Xiao,Zhirui Su,Tao Fang,Yuechun Shi,Xiangfei Chen

DOI: https://doi.org/10.1109/jqe.2021.3063880

IF: 2.5

2021-01-01

IEEE Journal of Quantum Electronics

Abstract:This addresses errors in [1] .
Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

Ruiyi Chen,Guannan Jiang,Yinlei Hao,Jianyi Yang,Minghua Wang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/ol.38.003354

2013-01-01

Abstract:We correct the calculation method [Opt. Lett.35, 1335 (2010)] of enhancement of nonreciprocal phase shift on the magneto-optical material boundary.
High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Shurong Dong,Jian Wu,Meng Miao,Jie Zeng,Yan Han,Juin J. Liou

DOI: https://doi.org/10.1109/led.2012.2208934

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Low-voltage-triggering silicon-controlled rectifier (LVTSCR) having a gate structure can offer a low trigger voltage in electrostatic discharge (ESD) applications. To avoid the threat of latch-up, the lateral width of LVTSCR is often stretched to obtain a relatively high holding voltage. The resulting lateral dimension increase, however, enlarges the size of LVTSCR. In this letter, a new method to increase the holding voltage of LVTSCR is developed. It is based on adding a floating-n-well region in the LVTSCR and can increase the holding voltage without requiring additional layout area. Furthermore, with this new LVTSCR, it is possible to implement an ESD protection operation within a very small window of 1 V.
Erratum to: On the voltage behavior of quantum dot light-emitting diode

Xiangwei Qu,Jingrui Ma,Pai Liu,Kai Wang,Xiao Wei Sun

DOI: https://doi.org/10.1007/s12274-023-6053-8

IF: 9.9

2023-09-29

Nano Research

Abstract:The title in the article was unfortunately mispresented on page 5511. The title of the article should be corrected to "On the voltage sweep behavior of quantum dot light-emitting diode". Instead of On the voltage behavior of quantum dot light-emitting diode It should read On the voltage sweep behavior of quantum dot light-emitting diode

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Correction to “‘Clickable’ Organic Electrochemical Transistors”

Roger Hasler,Felice Quartinello,Christoph Lorenz,Gonzalo E. Fenoy,Waldemar A. Marmisollé,O. Azzaroni,P. Bäuerle,W. Knoll

DOI: https://doi.org/10.1021/jacsau.2c00703

IF: 8

2023-01-09

JACS Au

Abstract:[This corrects the article DOI: 10.1021/jacsau.2c00515.].
Corrections to "High Power X-band Monolithic GaAs PIN Balanced Limiter"

Shifeng Li,Leiyang Wang,Bang Wu,Dingyi Guo,Yunfan Li,Yilin Zhao,Gary J. Cheng,Feng Liu

DOI: https://doi.org/10.1109/tpel.2023.3279589

IF: 5.967

2023-08-02

IEEE Transactions on Power Electronics

Abstract:Presents corrections to the paper, (High Power X-band Monolithic GaAs PIN Balanced Limiter).

engineering, electrical & electronic

Correction to “improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection” [aug 13 1050-1052]

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Correction: Li, S. Et Al. Research on a Power Management System for Thermoelectric Generators to Drive Wireless Sensors on a Spindle Unit. Sensors 2014, 14, 12701–12714

Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Low-Capacitance SCR Structure for RF I/O Application

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Erratum to “Accurate Sub-Structure Characteristic Mode Analysis of Dielectric Resonator Antennas With Finite Ground Plane” [Oct 21 6930-6935]

Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Corrections to “improved Range Tunability of DFB Lasers Based on REC Technique under Injection Current” [apr 21 DOI: 10.1109/JQE.2021.3051426]

Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications

Erratum to: On the voltage behavior of quantum dot light-emitting diode

Correction to “‘Clickable’ Organic Electrochemical Transistors”

Corrections to "High Power X-band Monolithic GaAs PIN Balanced Limiter"