Growth of InGaAs Quantum Dots on the AlGaAs(311)B Surface

Kouichi Akahane,Takahiro Kawamura,Sheng Lan,Yoshitaka Okada,Mitsuo Kawabe

DOI: https://doi.org/10.1143/jjap.40.1870

IF: 1.5

2001-01-01

Japanese Journal of Applied Physics

Abstract:We have investigated the self-organization mechanism of InGaAs quantum dots (QDs) on GaAs(311)B substrates by changing the underlying materials beneath the QD layer. It was found that the QD growth on the (311)B surface is strongly affected by the underlying layer. The size uniformity and structure ordering of QDs were degraded if the QDs were grown on an AlGaAs layer. However, these properties of QDs were recovered by introducing a 40-nm-thick GaAs spacer layer on AlGaAs. The dependence of the QD properties on the spacer layer thickness suggested that there exists a long-range interaction between the InGaAs QDs and the underlying layer in the case of QD growth on the (311)B surface. This long-range interaction is considered to arise from the steep change in strain distribution at the interface of GaAs and AlGaAs and/or intermixing of the InGaAs layer with the underlying layer.