Abstract:The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Highly Packed InGaAs Quantum Dots on GaAs(311)B

Self-Organization of High-Density III–V Quantum Dots on High-Index Substrates

Isolated and close-packed In0.4Ga0.6As/GaAs (311)B quantum dots

Growth of InGaAs Quantum Dots on the AlGaAs(311)B Surface

InGaAs Quantum Dots on GaAs(3 1 1)B Substrates Confined in AlGaAs Barrier Layers

Lateral Ordered InGaAs Self-Organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

Ingaas/Gaas Three-Dimensionally-Ordered Array of Quantum Dots

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Ultrahigh-density Self-Assembled Quantum Dots of InGaAs and Suppression of Optical State-Filling Effect

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Formation of Lateral-Two-dimensional Ordering in Self-Assembled InGaAs Quantum Dot on High Index Substrates

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Formation and Optical Characteristics of Strain-Relieved and Densely Stacked GaSb∕GaAs Quantum Dots

Two-Dimensional In0.4ga0.6as/Gaas Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth

Two-Dimensional In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate