Abstract:Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm(2)/V.s to 363.65 cm(2)/V.s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7 x 10(-10) V-2.Hz(-1) and 2.7 x 10(-8) V-2 .Hz(-1), respectively, while the extracted average trap density in the buried oxide increases from 1.42 x 10(17) cm(-3).eV(-1) to 6.16 x 10(18) cm(-3).eV(-1). Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92 x 10(-5) to 1.34 x 10(-2) after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M.rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are 10.82 V and 31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Influence of Characteristics’ Measurement Sequence on Total Ionizing Dose Effect in PDSOI Nmosfet

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Shift of Transitions Between Partially and Fully-Depleted Behavior in SOI MOSFET due to Radiation

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs