Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Impact of TID on Latch Up Induced by Pulsed Irradiation in CMOS Circuits

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

Hot Carrier Reliability of Radiation Hardened T-gate PD SOI NMOSFET after TID Radiation

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI P-Ldmosfets

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

Study of the Dose Rate Effect of 180 Nm Nmosfets

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets