Abstract:In this paper, we investigate the total ionizing dose (TID) effects of silicon-on-isolator (SOI) metal-oxidesemiconductor field-effect transistors (MOSFETs) with different sizes by using Co-60 gamma-ray. The SOI MOSFET contains a shallow trench isolation (STI) edge parasitic transistor and back gate parasitic transistor, in which STI oxide and buried oxide (BOX) are used as gate oxide, respectively. Although these parasitic effects are minimized by semiconductor device process, the radiation-induced trapped-charge can lead these parasitic effects to strengthen, thereby affecting the electrical characteristics of the main transistor. Since both the STI and BOX are sensitive to the TID effect, we try to distinguish their different influences on SOI devices in this work. The experimental results show that the characteristic degradation of device originates from the radiation-enhanced parasitic effect. The turning-on of the STI parasitic transistor leads the off-state leakage current to exponentially increase with total dose increasing until the off-state leakage reaches a saturation level. The threshold voltage shift observed in the narrow channel device results from the charge sharing in the STI, while the back gate coupling is a dominant contributor to the threshold voltage shift in short channel device. These results are explained by two simple models. The experimental data are consistent with the model calculation results. We can conclude that the smaller size device is more sensitive to TID effect in the same process. Furthermore, the influence of the negative bias at back gate and body on the radiation effect are also studied. The negative bias at back gate will partially neutralize the effect of positive trapped-charge in STI and that in BOX, thus suppressing the turning-on of STI parasitic transistor and the back gate coupling. The parasitic transistors share a common body region with the main transistor. So exerting body negative bias can increase the threshold voltage of the parasitic transistor, thereby restraining the TID effect. The experimental and simulation results show that the adjustment of the threshold voltage of parasitic transistor by body negative bias is limited due to the thin body region. The modulation of body negative bias in depletion region is more obvious in back gate parasitic transistor than in STI parasitic transistor. The weakening of parasitic conduction in the back channel is more noticeable than at STI sidewall under a body negative bias.

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI Nmosfets

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Low Frequency Noise Behaviors in the Partially Depleted Silicon-On-Insulator Device

Effect of Si-implantation Induced Nanocrystals on Reducing the Oxide and Interface Traps Densities of PD SOI MOSFET under Total-dose Irradiation

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

Numerical Investigation of High-Voltage Partial Buried P/N-Layer SOI LDMOS

Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Comparison of Total Ionizing Dose Effects Between Double and Conventional SOI Devices

Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS