Abstract:Low frequency noise in the partially depleted silicon-on-insulator (SOI) NMOS device is investigated in this paper. The experimental results show low frequency noise behaviors are in good consistence with classical noise model. Based on McWhorter model, the low frequency noise in the SOI device results from the exchange of carriers between channel and oxide. The densities of trapped charges in the front gate oxide and buried oxide are extracted. Due to the difference between manufacture processes, the extracted density of trapped charges in the buried oxide (Nt=8×1017 eV-1·cm-3) is larger than that in the gate oxide (Nt=2.767×1017 eV-1·cm-3), and the result is in good agreement with testing result of transfer characteristics in part 2. Based on the charge tunneling mechanism, the spatial distribution of trapped charges in the gate oxide and buried oxide are extracted by using the tunneling attenuation coefficient (λ=0.1 nm for SiO2) and time constant (τ0=10-10 s), and the result also proves that the trap in buried oxide is larger than that in gate oxide. In addition, the influence of channel length on the low frequency noise in the SOI device is discussed. The variations of normalized channel current noise power spectral density with channel length are investigated at four frequencies(10 Hz, 25 Hz, 50 Hz, and 100 Hz). The experimental results show that the normalized noise power spectral density decreases linearly with the increase of channel length, which indicates the low frequency noise of SOI device is mainly caused by the flicker noise in the channel, and the contribution of source/drain contact and parasitic resistances could be ignored. Finally, the dependences of back gate voltage on the front gate threshold voltage, front channel current and front channel noise are discussed by considering the charge coupling effect. The experimental results show the measured channel current and channel noise with applying front gate voltage and back gate voltage simultaneously are larger than those with applying the front gate voltage and back gate voltage separately.

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI Nmosfets

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Effects of Total Dose Irradiation on the Threshold Voltage of H-gate SOI NMOS Devices

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Total Ionizing Dose Effect of Gamma Rays on H-gate PDSOI MOS Devices at Different Dose Rates

Low Frequency Noise Behaviors in the Partially Depleted Silicon-On-Insulator Device

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS