Crystal Structures And Semiconductor Properties Of Alkline Metal Selenides Mhgsbse3(M = K, Rb, Cs)
Z Chen,Rj Wang
DOI: https://doi.org/10.3321/j.issn:0567-7351.2000.03.014
2000-01-01
Acta Chimica Sinica
Abstract:The solvothermal technique was used for the synthesis of MHgSbSe3 (M = K,Rb,Cs) and the crystal structures were determined by single crystal X - ray diffraction methods. CsHgSbSe3(I) crystallizes in the orthorhombic,space group Cmcm with a =0.4444(1)nm, b = 1.5514 (6) nn, c = 1.1261(7)nm, V = 0.7764(6)nm(3), Z = 4, R = 0.0605, wR = 0.1234. RbHgSbSe3(II) crystallizes in monoclinic, space group P2(1)/c with a = 0.7758(2)nm, b = 1.1234(2)nm, c = 0.8849 (2) nm, beta=106.60(3)degrees, V=0.7391(3)nm(3), Z = 4, R = 0.0552, wR = 0.1198. HgSbSe3(III) crystallizes in the orthorhombic, space group Pnma with a = 1.9482(4)nm, b = 0.8523(2)nm, c = 0.9830(2)nm, V = 1.6322(6)nm(3), Z = 8, R = 0.077, wR = 0.118.The crystal structures of I and II consist of two dimensional layers of (2)(infinity)[HgSbSe3](-) with M+ (M = Rb, Cs) counter ions located between the layers, while that of III consists of a three dimensional network with big channels (about 0.9nm x 1.2nm) along the b direction, with K atoms located in the center of the channels. Optical studies performed on the powder sample of these compounds, suggested that they are the semiconductors with a band gap of 1.65eV for I, and 1.75eV for II and 1.85eV for III.