Dimensionally Reduced Heavy Atom Semiconductors As Candidate Materials for Y-Ray Detection: the Case of Cs2Hg6S7

Androulakis Ioannis,Li Hao,Malliakas Christos,Peters John A.,Liu Zhifu,Wessels Bruce W.,Song Jung-Hwan,Jin Hosub,Freeman Arthur J.,Kanatzidis Mercouri G.
DOI: https://doi.org/10.1557/opl.2011.1273
2011-01-01
MRS Proceedings
Abstract:We address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs2Hg6S7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd0.9Zn0.1Te.
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