Abstract:Metal halide perovskites have been sought for ionizing radiation detection due to their tunable bandgap, high quantum yield, high absorption coefficient, excellent charge transport properties, flexible chemistry synthesis and cost-effective manufacturing. Among the family of perovskites, bismuth-based halide perovskites have attracted a rapidly growing interest as possible alternatives to lead-based halide perovskites in the development of nontoxic perovskites for opto-electronic devices. Herein, bismuth-based inorganic perovskite Cs 3 Bi 2 Br 9 single crystals were successfully grown using an innovative dual-diffusion gel growth technique for the first time. Silica gel has been developed as an enabling medium for gel growth of single crystals due to its transparency and easy control of nucleation sites. The UV-vis transmission spectrum was recorded using a light source of deuterium and halogen lamps and a Tauc plot was obtained, which gave an estimate of the bandgap energy, 2.54 eV. Silver electrodes were used on the top surface and the bottom surface of Cs 3 Bi 2 Br 9 single crystals for material characterization and detector tests. Current-voltage (I-V) measurements gave a room-temperature resistivity of 1.79×1011 Ω•cm. The Cs 3 Bi 2 Br 9 single crystals were then tested for X-ray response using ON\OFF testing which revealed attractive responsiveness for X-ray photons (rise and fall time: ≈0.3 s ). Using the net current (IXray−Idark), which can be extracted from the X-ray response measurements at varied applied voltages, a modified Hecht fitting was applied to estimate the mobility-lifetime product of electrons, μτ=5.12×10−4 ±6.70×10−5 cm2/V for a Ag/Cs 3 Bi 2 Br 9 /Ag device. This study shows that our innovative crystal growth method, enabled by the unique gel growth process, can be used as an appealing technique to grow functional crystals for opto-electronic devices. Meanwhile, Cs 3 Bi 2 Br 9 has shown great potential as a promising candidate for X-ray detection applications. The efforts in this work will serve as a metric for growing halide perovskites in the gel for opto-electronic devices.

Alkali Metal Chalcogenides for Radiation Detection

High-performance CsPbBr3-xClx/Si Heterojunction Photodetectors for Variable Wavelength Photodetection

Investigation Of Semi-Insulating Cs2hg6s7 And Cs2hg6-Xcdxs7 Alloy For Hard Radiation Detection

Cscdinq(3) (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Crystal Growth and Characterization of the X-ray and Γ-Ray Detector Material Cs2Hg6S7

Suspended Chalcogenide Microcavities for Ultra-Sensitive Chemical Detection.

Two-dimensional transition metal chalcogenides with hexagonal and orthorhombic structures: candidates for auxetics and photocatalysts

Gel growth and characterization of Cs3Bi2Br9 perovskite single crystals for radiation detection

Investigation of Defect Levels in Cs2hg6s7 Single Crystals by Photoconductivity and Photoluminescence Spectroscopies

Emerging New-Generation Semiconductor Single Crystals of Metal Halide Perovskites for Radiation Detection

Lead-halide Cs4PbBr6 single crystals for high-sensitivity radiation detection

Layered Chalcogenide Scintillators Enabled by Reversible Hydrous-Induced Phase Transformation for High-Resolution X-ray Imaging

Dimensionally Reduced Heavy Atom Semiconductors As Candidate Materials for Y-Ray Detection: the Case of Cs2Hg6S7

Cs2AgBiBr6-Tellurium Heterojunction-Based High-Performance X-ray Detectors

Exciton-harvesting enabled efficient charged particle detection in zero-dimensional halides

Synthesis, Characterization, and Photodetector Application of Alkali Metal Bismuth Chalcogenide Nanocrystals

Double perovskite Cs2AgBiBr6 radiation sensor: synthesis and characterization of single crystals

Halide lead perovskites for ionizing radiation detection

CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors

Emerging New Pseudobinary and Ternary Halides As Scintillators for Radiation Detection

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots