Cs3Cu2I5 Single Crystal for Efficient Direct X‐Ray Detection
Qinhua Wei,Xiongsheng Fan,Peng Xiang,Laishun Qin,Wenjun Liu,Tongyu Shi,Hang Yin,Peiqing Cai,Yufeng Tong,Gao Tang,Zugang Liu,Paul K. Chu,Hongsheng Shi,Yanliang Liu,Xue‐Feng Yu
DOI: https://doi.org/10.1002/adom.202300247
IF: 9
2023-06-29
Advanced Optical Materials
Abstract:High‐quality pure and Li‐doped Cs3Cu2I5 single crystals are grown by the Bridgman method, and a direct X‐ray detector is fabricated with vertical device configuration of Au/Cs3Cu2I5 single crystal/PCBM/Au. The Li+ dopant enhances the photoelectric properties of the Cs3Cu2I5 single crystal by increasing the mobility‐lifetime (μτ) product from 1.4 × 10−4 to 2.9 × 10−4 cm2V–1. The sensitive direct X‐ray detector exhibits a high sensitivity of 831.1 μC Gyair−1 cm−2 and low detection limit of 34.8 nGyair s−1 with negligible baseline current drift and excellent stability. Low‐dimensional copper‐based halide single crystals are considered excellent scintillators for indirect X‐ray detection, but their potential in direct X‐ray detection has not been investigated. Herein, high‐quality pure Cs3Cu2I5 and Li‐doped Cs3Cu2I5:Li single crystals are grown by the Bridgman method. The Li+ dopant enhances the photoelectric properties of the Cs3Cu2I5 single crystal by extending the carrier lifetime, improving the carrier mobility from 6.49 to 9.52 cm2 V−1 s−1, and increasing the mobility‐lifetime (μτ) product from 1.4 × 10−4 to 2.9 × 10−4 cm2 V−1. The sensitive direct X‐ray detector with a vertical device configuration of Au/Cs3Cu2I5:Li single crystal/PCBM/Au is fabricated and demonstrated to have a high sensitivity of 831.1 μC Gyair−1 cm−2 and low detection limit of 34.8 nGyair s−1. Furthermore, the detector shows negligible baseline current drift and excellent stability upon X‐ray radiation.
materials science, multidisciplinary,optics