Cs2hg3s4: A Low-Dimensional Direct Bandgap Semiconductor

Saiful M. Islam,S. Vanishri,Hao Li,Constantinos C. Stoumpos,John. A. Peters,Maria Sebastian,Zhifu Liu,Shichao Wang,Alyssa S. Haynes,Jino Im,Arthur J. Freeman,Bruce Wessels,Mercouri G. Kanatzidis
DOI: https://doi.org/10.1021/cm504089r
IF: 10.508
2015-01-01
Chemistry of Materials
Abstract:Cs2Hg3S4 was synthesized by slowly cooling a melted stoichiometric mixture of Hg and Cs2S4. Cs2Hg3S4 crystallizes in the Ibam spacegroup with a = 6.278(1) A, b = 11.601(2) A, and c = 14.431(3)A; dcalc = 6.29 g/cm3. Its crystal structure consists of straight chains of [Hg3S4]n2n– that engage in side-by-side weak bonding interactions forming layers and are charge balanced by Cs+ cations. The thermal stability of this compound was investigated with differential thermal analysis and temperature dependent in situ synchrotron powder diffraction. The thermal expansion coefficients of the a, b, and c axes were assessed at 1.56 × 10–5, 2.79 × 10–5, and 3.04 × 10–5 K–1, respectively. Large single-crystals up to ∼5 cm in length and ∼1 cm in diameter were grown using a vertical Bridgman method. Electrical conductivity and photoconductivity measurements on naturally cleaved crystals of Cs2Hg3S4 gave resistivity ρ of ≥108 Ω·cm and carrier mobility-lifetime (μτ) products of 4.2 × 10–4 and 5.82 × 10–5 cm2 V–1 for electro...
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