Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Unique Conduction Band Minimum of Semiconductors Possessing a Zincblende-Type Framework

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Electronic structures of filled tetrahedral semiconductors LiMgN and LiZnN: conduction band distortion

2D Materials: C<sub>3</sub> N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)

Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

Covalent bonding and the nature of band gaps in some half-Heusler compounds

Electrically tunable bandgaps for g-ZnO/ZnX (X = S, Se, Te) 2D semiconductor bilayers

Structural, Electronic and Optical Properties of Bandgap-Tunable Cu2ZnSixSn1−xSe4 Alloys

Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation

Cs2hg3s4: A Low-Dimensional Direct Bandgap Semiconductor

Band Gap Engineering of Znsnn2/Zno (001) Short-Period Superlattices Via Built-In Electric Field

Alloy Engineering of Electronic and Optical Properties of Tetragonal Monolayer Zinc Chalcogenides

Electronic Structure of Half-Heusler Semiconductor Liben

Superlight And Superflexible Three-Dimensional Semiconductor Frameworks A(X Equivalent To Y)(4) ( A = Si, Ge; X/Y = C, B, N) With Tunable Optoelectronic And Mechanical Properties From First-Principles

Revisiting the Zinc-Blende/Wurtzite Heterocrystalline Structure in CdS

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Comprehensive study on band-gap variations in $sp^3$-bonded semiconductors: roles of electronic states floating in internal space

Electronic states in GaAs-AlAs short-period superlattices

Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.

Unified theory of the direct or indirect bandgap nature of conventional semiconductors