Abstract:In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²&middot;V&minus;1&middot;s&minus;1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current&ndash;voltage and capacitance&ndash;voltage (C&ndash;V) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened.

Contact Resistance Asymmetry of Amorphous Indium–gallium–zinc–oxide Thin-Film Transistors by Scanning Kelvin Probe Microscopy

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Probing Charge Dynamics in Amorphous Oxide Semiconductors by Time-of-flight Microwave Impedance Microscopy

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display

Contact Resistance Improvement Using Interfacial Silver Nanoparticles In Amorphous Indium-Zinc-Oxide Thin Film Transistors

First-principles Investigation of the Asymmetric Contact Effect on Current-Voltage Characteristics of a Molecular Device.

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Barrier height modulation in Amorphous IGZO/Metal interface using Trichlorosilane-Based Self-Assembled monolayers

The Source/Drain Resistance Of A-Igzo Tft

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

A Universal Method for Extracting and Quantitatively Analyzing Bias-Dependent Contact Resistance in Carbon-Nanotube Thin-Film Transistors

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Asymmetric Contact in Tin Bismuth Oxide Thin Film Transistors

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode