Abstract:In this paper, for the ITO-SiOx(In,Sn)/n-Si photovoltaic device, the molecular coacervate of In-O-Si bonding and two kinds of quantum states for indium-grafted in amorphous silicon oxide a-SiOx (In, Sn) layers are predicted by molecular dynamics simulation and density function theory calculation, respectively. The results show that the SiOx layers are the result of the inter-diffusion of the In, Sn, O, Si element. Moreover, In-O-Si and Sn-O-Si bonding hybird structures existing in the SiOx layers are found. From the result of formation energy calculations, we show that the formation energies of such an In-O-Si configuration are 5.38 eV for Si-rich condition and 4.27 eV for In-rich condition respectively, which are both lower than the energy (10 eV) provided in our experiment environment. It means that In-O-Si configuration is energetically favorable. By the energy band calculations, In and Sn doping induced gap states (E-v+4.60 eV for In, E-v+4.0 eV for Sn) within a-SiO 2 band gap are found, which are different from the results of doping of B, Al, Ga or other group-III and V elements. The most interesting phenomena are that there is either a transition level at E-v+0.3 eV for p-type conductive conversion or an extra level at E-v+4.60 eV induced by In doping within the dielectric amorphous oxide (a-SiOx) model. These gap states (GSII and GSIS) could lower the tunneling barrier height and increase the probability of tunneling, facilitate the transport of photo-generated holes, strengthen the short circuit current, and/or create negatively charged defects to repel electrons, thereby suppressing carrier recombination at the p-type inversion layer and promoting the establishment of the effective built-in-potential, increasing the open-circuit voltage and fill factor. Therefore, the multi-functions such as good passivation, built-in field, inversion layer and carriers tunneling are integrated into the a-SiOx (In, Sn) materials, which may be a good candidate for the selective contact of silicon-based high efficient heterojunction solar cells in the future. This work can help us to promote the explanations of the electronic structure and hole tunneling transport in ITO-SiOx/n-Si photovoltaic device and predict that In-O-Si compound could be as an excellent passivation tunneling selective material.

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