Abstract:The interface and bulk trap densities were separately extracted from self-aligned top-gate (SA-TG) coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using the low-frequency capacitance–voltage (C–V) characteristics and space-charge-limited current (SCLC) under the flat-band condition. In the method based on the C–V curve, the energy distribution of the interface trap density was extracted using the low-frequency C–V characteristics, and that of the bulk trap density was obtained by subtracting the density of interface trap states from the total subgap density of states (DOS) at each energy level. In the SCLC-based method, the energy distribution of the bulk trap density was extracted using the SCLC under the flat-band condition at high drain-to-source voltages, and that of the interface trap density was obtained by subtracting the density of bulk trap components from the total subgap DOS at each energy level. In our experiments, the two characterization techniques provided very similar interface and bulk trap densities and showed that approximately 60% of the subgap states originate from the IGZO/SiO2 interface at the conduction band edge in the fabricated IGZO TFTs, although the two characterization techniques are based on different measurement data. The results of this study confirm the validity of the characterization techniques proposed to separately extract the interface and bulk trap densities in IGZO TFTs. Furthermore, these results show that it is important to reduce the density of interface trap states to improve the electrical performance and stability of fabricated SA-TG coplanar IGZO TFTs.

Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Low-Frequency Noise Modeling of Amorphous Indium–Zinc-Oxide Thin-Film Transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Effects of low‐temperature thermal annealing on interface characteristics in IZO/IGZO dual‐channel thin‐film transistors

The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Film Transistors

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mobility Enhancement In Amorphous In-Ga-Zn-O Thin-Film Transistor By Induced Metallic In Nanoparticles And Cu Electrodes

High mobility achieved in InGaZnO TFT with vacuum-gap as insulating layer

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics