β-Ga2O3: Ultralow loss and low permittivity dielectric ceramics for high-frequency packaging substrate
Wei Wang,Chao Du,Xin Wang,Diming Xu,Fayaz Hussain,Moustafa Adel Darwish,Tao Zhou,Di Zhou,Hongsong Qiu,Biaobing Jin,Zhongqi Shi,Yawei Chen,Qixin Liang,Meirong Zhang
DOI: https://doi.org/10.1039/d3qi00578j
IF: 7.779
2023-05-16
Inorganic Chemistry Frontiers
Abstract:As the core carrier of integrated circuits, packaging substrate usually responds in time to the evolution of electronic products. Among which, ceramic substrate materials are desired to have excellent dielectric and voltage-resistant properties, high reliability, good thermal and chemical stability. The β-Ga2O3 ceramic prepared in this work has excellent microwave dielectric properties with Q × f ~ 133140 GHz (Q = 1/ tanδ), ԑr ~ 9.57, and TCF ~ −58.2 ppm °C−1, which meets the requirements of high-frequency packages. Another highlight is that the β-Ga2O3 ceramic has a higher dielectric strength of ~ 30 kV mm−1 than conventional ceramic substrates, such as Al2O3, AlN, etc., allowing it to be used in higher power circuits. Meanwhile, a flexural strength of ~ 130 MPa, a thermal expansion of ~ +8.9 ppm °C−1 and a thermal conductivity of ~ 15 W mK−1 have been achieved in the β-Ga2O3 ceramic. Besides, a patch antenna for sub-6 GHz applications was designed and fabricated using the Ga2O3 ceramic substrate, showing good performance with a wide bandwidth of ~ 140 MHz, a return loss S11 of ~ −21 dB at the center frequency, a radiation efficiency of ~ 92% and a gain of ~ 5 dBi. The stated results guarantee the Ga2O3 ceramic a great potential in applications towards high-frequency and high-power fields.
chemistry, inorganic & nuclear