Preparation and Electrical Properties of High‐<i>T</i><sub>C</sub> Piezoelectric Ceramics of Strontium‐Substituted <scp><scp>Bi</scp></scp>(<scp><scp>Ni</scp></scp><sub>1/2</sub><scp><scp>Ti</scp></scp><sub>1/2</sub>)<scp><scp>O</scp></scp><sub>3</sub>–<scp><scp>PbTiO</scp></scp><sub>3</sub>

Huajun Kang,Jun Chen,Laijun Liu,Changzheng Hu,Liang Fang,Xianran Xing
DOI: https://doi.org/10.1111/j.1551-2916.2012.05078.x
IF: 4.186
2012-01-01
Journal of the American Ceramic Society
Abstract:A piezoelectric system of (1− x ) Bi ( Ni 1/2 Ti 1/2 ) O 3 – x ( Pb (1− y ) Sr y TiO 3 ) ( BNT–PST ) is developed to have good high temperature piezoelectric properties with much improved resistivity. The crystal structure shows that the phase transformation from tetragonal phase to rhombohedral one is gradually shifted to the composition with high content of PT by the substitution of strontium. The problem of leakage current for the Bi ( Ni , Ti ) O 3 – PbTiO 3 can be well resolved by introducing the dopant of strontium. Both dielectric loss and DC resistivity can be much reduced not only at room temperature but also high temperature. An optimum composition of 0.53 Bi ( Ni 1/2 Ti 1/2 ) O 3 –0.47( Pb 0.95 Sr 0.05 ) TiO 3 is obtained to have a good potential application of high temperature piezoelectric ( d 33 = 205 pC/N, E C = 3.32 kV/mm, P r = 41.2 μC/cm 2 ). Strontium could be a useful dopant for the studies on the high temperature piezoelectric ceramics in future.
What problem does this paper attempt to address?