SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

Fenglei Wang,Liying Zhang,Yafei Zhang
DOI: https://doi.org/10.1007/s11671-008-9216-3
2008-01-01
Nanoscale Research Letters
Abstract:SiC nanowires have been synthesized at 1,600 degrees C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO(2) nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.
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