Structure Design of Silicon Based Nanopore Chips for Noise Reduction

Wei Liu,Yin Zhang,Zengdao Gu,Fei Zheng,Jingjie Sha,Yunfei Chen
DOI: https://doi.org/10.1109/jsen.2023.3344180
IF: 4.3
2024-01-01
IEEE Sensors Journal
Abstract:Solid-state nanopores have promising applications in single-molecule detection, including deoxyribonucleic acid (DNA), ribonucleic acid (RNA), proteins, and so on. However, the current noise during nanopore sensor measurement severely limits its detection accuracy. Intrinsic noise of silicon-based chip is a major source of noise for nanopore sensor due to the large chip capacitance. This article systematically studies the influence of chip structure on ionic current noise through a series of experiments and calculations. We design and fabricate SiN-SiO-Si chips with different layer thicknesses, free-standing membrane areas, and selectively thinned areas and measure their noise characteristics. Considering detection sensitivity, noise level, and fabrication cost, the proper structure parameters of chip are given: 1-mu m-thick SiO, 50-nm-thick SiN, and 20 x 20 mu m(2) area free-standing SiN membrane with a locally thinned region of diameter less than 4 mu m. The biomolecule detection performance of nanopore sensor is evaluated by dsDNA translocation experiments. The signal-to-noise ratios (SNRs) for the nanopore supported by the chip with optimized structure have twice improved.
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