Signal Integrity Augmentation Techniques for the Design of 64-Gbaud Coherent Transimpedance Amplifier in 90-Nm SiGe BiCMOS
Shuaizhe Ma,Nianquan Ran,Xi Liu,Yifei Xia,Songqin Xu,Wei Huang,Chen Tan,Jing Li,Zhenyu Yin,Shaoheng Lin,Jianhua Pan,Zhe Chen,Chaoxuan Zhang,Wu Wen,Quan Pan,Zhongming Xue,Xiaoyan Gui,Li Geng,Dan Li
DOI: https://doi.org/10.1109/tcsi.2024.3450700
2024-01-01
Abstract:This paper presents signal integrity augmentation design techniques in a 64-GBaud transimpedance amplifier (TIA) for coherent optical communication. In the FE-TIA, a bonding wire ringing reduction technique and an input DC current cancellation (IDCC) loop adapted for coherent communication are proposed. In the post amplifiers, a group delay variation (GDV) friendly bandwidth boosting technique is proposed to achieve optimal time domain performance. A non-linearity cancellation technique and a high-linearity gain control approach are proposed in both circuit and system levels. These signal integrity augmentation techniques form a toolkit to solve the design challenges in bandwidth, linearity, GDV, ringing, offset, crosstalk, etc. in high-speed high-order modulation communication. Fabricated in a 90-nm SiGe BiCMOS technology, the TIA shows input-referred noise current density of 15.1 pA/ root Hz, bandwidth of over 40 GHz with GDV less than +/- 3.75 ps. The TIA gain can be adjusted between 150 $\Omega $ -5 K Omega, which enables maximum overload input current of 3 mApp. The total harmonic distortion (THD) is less than 3% and the crosstalk between two channels is less than -3 dB. The chip consumes 264 mW from 3.3 V supply.