Thermal Release Behavior of Hydrogen in TiH_x

Yang Fujia
1998-01-01
Abstract:The TiHx film prepared by chemical adsorption is annealed. When temperature is above 343℃, the concentration of hydrogen varies significantly. The depth profiles of hydrogen in TiHx samples annealed at 343℃ for different time are determined by ERD with 3MeV 4He. The mechanism of thermal release behavior of hydrogen is discussed. When the annealing time is long enough, a hydrogen peak at the sample surface can be observed. It is confirmed by high energy He+ backscattering that the carbon contaminated at the surface during the experiments or/and the film preparation can strongly influence the release behavior of hydrogen.
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