An Integrated Bootstrap Diode Emulator for 600-V High Voltage Gate Drive IC with P-Sub/P-Epi Technology

Jun‐Jie Zhu,Weifeng Sun,Yunwu Zhang,Shengli Lu,Longxing Shi,Sheng Zhang,Wei Su

DOI: https://doi.org/10.1109/tpel.2015.2411334

IF: 5.967

2016-01-01

IEEE Transactions on Power Electronics

Abstract:An integrated bootstrap diode emulator, including the high voltage field-effect-transistor (HV-FET), the gate control circuit and the back-gate control circuit, is experimentally proposed base on p-sub/p-epi bipolar-CMOS-DMOS technology for the first time. By adopting the gate and the back-gate control circuits, the charging time of the bootstrap capacitor can be improved by about 27% without any latch-up issues. The measured blocking voltage of the proposed HV-FET is higher than 750 V, which can be embedded in the isolation structure without sacrificing the chip area and is suitable for 600-V motor control system application. Finally, a 600-V-class high voltage gate drive IC with the proposed integrated bootstrap diode emulator is fabricated. The chip size is about 2.1 mm 2 and the charging duration is about 80 μs with 1-μF bootstrap capacitor.