Application of Bulk Silicon Carbide Technology in High Temperature MEMS Sensors

Yanxin Zhai,Haiwang Li,Hanxiao Wu,Zhi Tao,Guoqiang Xu,Xiaoda Cao,Tiantong Xu
DOI: https://doi.org/10.1016/j.mssp.2024.108137
IF: 4.1
2024-01-01
Materials Science in Semiconductor Processing
Abstract:—SiC is widely used in power electronics and high-temperature devices due to its comprehensive physicochemical properties, including high thermal stability, mechanical strength, etc. In recent years, the advantages of SiC for MEMS have gradually attracted the attention of researchers. However, the development of bulk SiC technology in the field of MEMS sensors has not been reviewed, especially in the fabrication and performance of MEMS bulk SiC sensors. The purpose of this review is to summarize the development status of bulk SiC materials, processes and sensors. The existing pressure sensors, accelerometers and other sensors based on SiC are reviewed. And the possible technological innovations for bulk SiC MEMS sensors are further proposed.
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