Abstract:The processing, particularly, etching of brittle, hard, and anti-corrosion materials represented by the third-generation wide bandgap semiconductor silicon carbide (SiC), is a significant challenge. Although SiC has excellent electrical, mechanical, and chemical properties, the difficulty of processing limits its application in various sensor devices. To solve this problem, in this study, an integrated processing method of femtosecond laser-assisted SiC dry etching is proposed, which realizes high surface quality and high rate etching of the SiC microstructure. Specifically, the effects of different laser processing parameters on the processing effect were first studied through orthogonal experiments. Experiments indicate that compared with laser power and laser scan times, laser processing speed has a more obvious impact on the processing effect. Subsequently, considering the elastic modulus anisotropy of SiC, a 5MPa piezoresistive pressure sensor chip was designed. Using the proposed composite processing method, a chip sensitive diaphragm was obtained. The diaphragm thickness and diameter are 76 μm and 1700 μm respectively. The overall sensor chip dimension was 4000 μm × 4000 μm × 350 μm. Static tests demonstrated that the sensor have excellent performance with sensitivity of 6.8 mV/MPa, linearity of 0.69% FS, and repeatability of 0.078% FS. In addition, by designing high-temperature packaging, the sensor achieved a pressure test at 400 °C. This study verifies the feasibility of the composite processing method, realizes the fabrication and measurement of high-temperature pressure sensors, and provides a reference for the micro-and nanostructure processing of various SiC sensors.

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Fabrication of 4H-SiC piezoresistive pressure sensor for high temperature using an integrated femtosecond laser-assisted plasma etching method

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Fabrication of SiC MEMS Pressure Sensor by Anodic Bonding

Fabrication of SiC MEMS Pressure Sensor Based on Novel Vacuum-Sealed Method

Development of Laser-Micromachined 4H-SiC MEMS Piezoresistive Pressure Sensors for Corrosive Environments

Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

All-SiC Fiber-Optic Sensor Based on Direct Wafer Bonding for High Temperature Pressure Sensing

Design of 6H-Sic High Temperature Pressure Sensor Chip

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Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Langasite Bonding via High Temperature for Fabricating Sealed Microcavity of Pressure Sensors

Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

A Study on the Deep Etching and Ohmic Contact Process of 6H-Sic High-Temperature Pressure Sensor

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

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Study on a PECVD SiC-coated Pressure Sensor

Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer

A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor