Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor

Baohua Tian,Haiping Shang,Lihuan Zhao,Dahai Wang,Yang Liu,Weibing Wang

DOI: https://doi.org/10.3390/s21020379

IF: 3.9

2021-01-07

Sensors

Abstract:The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation

What problem does this paper attempt to address?

The paper is primarily dedicated to addressing the issue of airtightness in the sealed cavity structure of pressure sensors in high-temperature environments, specifically for all-silicon carbide (SiC) piezoresistive pressure sensors. Specifically, the focus of the research is on developing a novel cavity structure and its manufacturing method to enhance the stability and reliability of the sensor under high-temperature conditions.

To achieve this goal, the authors propose a room-temperature direct bonding technique to prepare a sealed SiC cavity structure. By bonding untreated SiC wafers with SiC substrates that have shallow groove patterns, a closed cavity is formed. This method avoids several issues present in traditional manufacturing processes, such as the complexity of deep etching and problems caused by mismatched thermal expansion coefficients of different materials.

The paper details the experimental process, including surface preparation of the SiC wafers, formation of the cavity structure, and the room-temperature direct bonding process. Additionally, multiple tests were conducted to evaluate the airtight performance of the prepared cavity structure, including microscopic structure observation, tensile strength testing, and leakage detection.

In summary, the main objective of this paper is to develop a highly airtight cavity structure for all-SiC piezoresistive pressure sensors suitable for high-temperature environments and to verify its performance. By adopting the room-temperature direct bonding technique, this research provides a feasible solution to the key technical issues of high-temperature pressure sensors.