Design and Fabrication of Bulk Micromachined 4H-SiC Piezoresistive Pressure Chips Based on Femtosecond Laser Technology

Lukang Wang,You Zhao,Yulong Zhao,Yu Yang,Taobo Gong,Le Hao,Wei Ren

DOI: https://doi.org/10.3390/mi12010056

IF: 3.4

2021-01-06

Micromachines

Abstract:Silicon carbide (SiC) has promising potential for pressure sensing in a high temperature and harsh environment due to its outstanding material properties. In this work, a 4H-SiC piezoresistive pressure chip fabricated based on femtosecond laser technology was proposed. A 1030 nm, 200 fs Yb: KGW laser with laser average powers of 1.5, 3 and 5 W was used to drill blind micro holes for achieving circular sensor diaphragms. An accurate per lap feed of 16.2 μm was obtained under laser average power of 1.5 W. After serialized laser processing, the machining depth error of no more than 2% and the surface roughness as low as 153 nm of the blind hole were measured. The homoepitaxial piezoresistors with a doping concentration of 1019 cm−3 were connected by a closed-loop Wheatstone bridge after a rapid thermal annealing process, with a specific contact resistivity of 9.7 × 10−5 Ω cm2. Our research paved the way for the integration of femtosecond laser micromachining and SiC pressure sensor chips manufacturing.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

### Problems Addressed by the Paper

The paper aims to address the issues related to the manufacturing and application of pressure sensors in high-temperature and harsh environments. Specifically, it proposes a method for manufacturing 4H-SiC piezoresistive pressure chips based on femtosecond laser technology. Traditional silicon-based MEMS pressure sensors are limited in performance when temperatures exceed 200°C and are prone to plastic deformation in extreme environments (such as 600°C), making long-term pressure measurement difficult. Silicon carbide (SiC), due to its excellent material properties (such as wide bandgap and high thermal conductivity), is considered an ideal material for high-temperature environments.

However, traditional Si bulk micromachining techniques are ineffective in manufacturing "all-SiC" pressure sensor diaphragms. Wet etching and plasma etching techniques face numerous issues when processing SiC, such as slow etching rates and severe lateral etching. Therefore, the paper proposes a new method based on femtosecond laser technology to overcome these problems, achieving high-precision, low-damage manufacturing of SiC piezoresistive pressure chips. By optimizing the combination of laser parameters, circular sensing diaphragms with smooth surfaces and precise thicknesses were obtained, and a Wheatstone bridge structure was constructed on the front side of the chip's piezoresistive membrane for testing.