Abstract:Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Modulating Microstructure and Thermal Properties of Diamond/sinx/gan Multilayer Structure by Diamond Growth Temperature

Modulating microstructure and thermal properties of diamond/SiN x /GaN multilayer structure by diamond growth temperature

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.

Effect of GaN-on-diamond Integration Technology on Its Thermal Properties

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Effect of Bias-Enhanced Nucleation on the Microstructure and Thermal Boundary Resistance of GaN/SiNx/diamond Multilayer Composites

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Thermal Characteristics of GaN-on-diamond HEMTs: Impact of Anisotropic and Inhomogeneous Thermal Conductivity of Polycrystalline Diamond

Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

A Simulation of Thermal Management Using a Diamond Substrate with Nanostructures

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Thermal Characterization of Polycrystalline Diamond Thin Film Heat Spreaders Grown on Gan Hemts

Effect of bias-enhanced nucleation on the microstructure and thermal boundary resistance of GaN/SiN x /diamond multilayer composites

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

FEM Thermal Analysis of High Power GaN-on-diamond HEMTs

Comparison of SiNx Dielectric Layer Grown by Plasma‐Enhanced Chemical Vapor Deposition, Low‐Pressure Chemical Vapor Deposition, and Metal‐Organic Chemical Vapor Deposition in Diamond‐ and GaN‐Based Integrated Devices

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review