Abstract:Due to outstanding properties of silicon carbide (SiC) and unipolar current conduction mechanism, the active chip size of SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is significantly shrunk, which significantly improves switching performance. However, the termination region cannot be scaled down due to the existence of high breakdown electric field enclosing active region. Therefore, a SiC MOSFET switching loss model considering termination region effect is proposed in this paper with revealing physical insights into termination region during switching process. Furthermore, through theoretical analysis, model establishment, and simulation results, the loss breakdown under various blocking voltages (800, 1000, and 1200 V) for 1-, 3-, and 6-A current rated devices is obtained. ${E}_{\textsf {term}}$ and ${E}_{\textsf {acti}}$ as intrinsic loss of turn-on process make a significant contribution to the total switching loss under fast gate drive condition. The model shows that the turn-on and turn-off losses are under and overestimated, respectively, by using the commonly used electrical measurement. The loss from termination region aggravates the underestimation of turn-on loss and overestimation of turn-off loss further. The proposed loss estimation equation could provide accurate loss to help choose device and design power circuit for power electronic community. The results also raise new perspective to edge termination of efficient/reliable SiC MOSFET for device people.

Effect of Termination Region on Unclamped Inductive Switching Failure for 4H-Sic VDMOS

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Experimental and Theoretical Demonstration of Temperature Limitation for 4H-Sic MOSFET During Unclamped Inductive Switching

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET

Impact of Termination Region on Switching Loss for SiC MOSFET

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

Failure Mechanisms Of Soi High-Voltage Ligbts And Ldmoses Under Unclamped Inductive Switching

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Impact of the Transition Region Between Active Area and Edge Termination on Electrical Performance of SiC MOSFET

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Impact of SiC power MOSFET interface trap charges on UIS reliability under single pulse

Investigation of Maximum Junction Temperature for 4h‐sic MOSFET During Unclamped Inductive Switching Test