Abstract:Silicon carbide (SiC) MOSFET power devices have received increasing attention, due to its wide band gap, high thermal conductivity, high critical breakdown field strength, and high carrier saturation velocity, etc. Major semiconductor device manufacturers have introduced series of commercial SiC MOSFET products, focusing on high-power applications with high reliability. In practical circuits, the main failure root of SiC MOSFET power devices is avalanche breakdown. The avalanche characteristics and the underlying mechanisms of SiC devices are different from those of Si devices. However, the avalanche tolerance and other parameters of SiC MOSFET are barely included in the current manufacturer's data sheet and related research so far. Therefore, it is of great importance to study the avalanche tolerance of SiC MOSFETs. In this review, we summarized the setups for avalanche tolerance test, mainly focused on unclamped inductive switching tests. Then, the avalanche test results of 650V, 900V, 1200V and 10kV SiC MOSFETs were described according to the voltage level. Next, different theories on the failure mechanism of SiC MOSFET were introduced. Finally, the deficiencies of current research and possible future research directions were proposed. In summary, this paper provides a comprehensive review of avalanche test setup, test results and avalanche failure analysis, and future development trends of SiC MOSFET power devices.

Investigation of Maximum Junction Temperature for 4h‐sic MOSFET During Unclamped Inductive Switching Test

Experimental and Theoretical Demonstration of Temperature Limitation for 4H-Sic MOSFET During Unclamped Inductive Switching

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Comparative Study on Reliability and Application Features of SiC MOSFET

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Investigation of Short-Circuit Failure Mechanisms of SiC MOSFETs by Varying DC Bus Voltage

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Avalanche Capability Characterization of 1.2 Kv SiC Power MOSFETs Compared with 900V Si CoolMOS

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications