Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures
Taewoong Kim,Younggug Seol,Sunhee Lee,Jinhwan Choi,Jinwoo Lee,Jintaek Kim,Pilsuk Lee,Juchan Park,Boik Park,Nguyen Thanh Tien,Kihyun Kim,Cheol Jang,Yong Jo Kim,Changhee Lee
DOI: https://doi.org/10.1002/jsid.1305
2024-05-22
Journal of the Society for Information Display
Abstract:Polarization multiplexing is applied to method. The polarization multiplexing is achieved with the help (PBD). A high efficiency, broadband, and wide‐view PBD was also fabricated. A new flexible low‐temperature polycrystalline silicon thin film transistors (LTPS TFTs) on PI substrate with organic ILD layer, island TFT, and TFT channel perpendicular to stress direction was proposed. AMOLED display panel manufactured with organic ILD did not show any visible degradation of panel image after outward rolling cycles of 200,000 at rolling radius of 4 mm or inward folding cycles of 200,000 at folding radius of 1 mm. Another novel structure of TFT with channel perpendicular to stress direction significantly reduced change of threshold voltage of −0.03 V compared with change of threshold voltage of −0.6 V for TFT with channel parallel to stress direction for reliability test of high drain current (HDC) after 100,000 outward‐bending cycles at bending radius of 3 mm. After inward‐bending cycles of 200,000 at bending radius of 1 mm, reliability test results for TFT device with organic ILD layer showed that change of on‐current is 10.07% for hot carrier instability (HCI) test, change of threshold voltage −0.31 V for negative bias thermal instability (NBTI) test, change of threshold voltage −0.24 V for hysteresis test, and breakdown voltage of gate insulator 7.73 MV/cm, respectively, and these performances are similar to those of TFT device with inorganic ILD (SiNx).
engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied