Abstract:The proposed μLED pixel circuit utilizes IGZO/Te CFETs, which exhibits symmetrical ambipolar behavior. The IGZO/Te heterostructure is confirmed to consist of an amorphous IGZO layer and a hexagonal Te layer using HR‐TEM and GIXRD. The circuit, based on PWM, achieved 8‐bit gray level control and stable μLED luminance, confirming its suitability for high‐quality μLED displays. This study investigates a micro light‐emitting diode (μLED) pixel circuit using the heterogeneous integration of complementary field‐effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium‐gallium‐zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs exhibit ambipolar behavior with a turn‐on voltage of 2.0 V and field‐effect mobility of 0.74 and 1.42 cm2 V−1 s−1 for p‐type and n‐type channels, respectively. Inverters comprising IGZO/Te CFET and IGZO TFT exhibit inverting behavior. A μLED pixel circuit is designed using IGZO/Te CFETs based on pulse width modulation (PWM). The proposed circuit uses an inverter structure with IGZO/Te and IGZO to control the emission time, suppressing the wavelength shift of μLEDs depending on the μLED current levels. The operation of the proposed pixel circuit is investigated through simulation and measurement of the fabricated circuit. The fabricated μLED pixel circuit successfully exhibits PWM operation, controlling the emission time and luminance. Consequently, IGZO/Te CFETs show promise as devices for high‐quality μLED displays.

38.1: Invited Paper: Research Progress of High‐performance Metal Oxide for Micro‐LED

2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display

31‐3: Enhancing Micro‐LED Pixel Circuit Performance through Threshold Voltage Compensation Utilizing LTPO Technology

37‐1: Invited Paper: Manufacturing Readiness of High‐Efficiency and Low‐Cost MicroLED Displays

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Research Progress of Active Matrix Organic Light Emitting Diode (AMOLED) Displays Driven by Metal Oxide Thin Film Transistors (TFT)

High Performance Metal Halide Perovskite Light-Emitting Diode: From Material Design to Device Optimization

83‐4: High‐Performance Inverted Green and Red InP Quantum‐dot Light Emitting Diodes with Robust ZnS Electron Transport Interlayer

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Alleviating the Crosstalk Effect Via a Fine-Moulded Light-Blocking Matrix for Colour-Converted Micro-Led Display with a 122% NTSC Gamut

38.3: Compact Gate Driver on Array for Progressive‐mode PWM Micro‐LED Display using LTPS TFTs

Metal Oxide Thin Film Transistors and Their Application to Novel Display Technology

P‐11.5: Realization of High PPI Transparent TFT Backplane and Its Application in Micro‐LED Display

36.1: Invited Paper: High Performance PrIZO Oxide TFTs and the Target Fabrication

32‐2: Mask Reducing Backplane Architecture for Advanced Micro‐LED Display

46.3: Invited Paper: 7.1 inch full color flexible Micro‐LED display based on Topgate IGZO backplane

High Performance A-PWM Μled Pixel Circuit Design Using Double Gate Oxide TFTs

A new gate driver employing linearly sweep signal generated module for high‐resolution micro‐LED display with line‐by‐line pulse width modulation driving method

Heterogeneous Integration of Complementary Field‐Effect Transistors for High‐Performance Micro LED Displays

A New Analog PWM Pixel Circuit with Metal Oxide TFTs for Micro-LED Displays

Monolithic 3D mu-LED displays through BEOL integration of large-area MoS2 TFT matrix