Abstract:The amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are of great interest due to their high mobility, excellent homogeneity, and low processing temperature. With energy conservation and flexible electronics emerging, further reducing post-processing temperatures has become a primary concern. $\text{O}_{{2}}$ plasma treatment has received much attention because it can supply oxygen atoms directly and enhance the performance of AOS thin films at low temperatures. In this study, we provide a combined post-treatment incorporating low-temperature annealing and $\text{O}_{{2}}$ plasma treatment to improve the performance of praseodymium-doped indium zinc oxide (PrIZO) thin films and TFTs. With the increase of $\text{O}_{{2}}$ plasma treatment power, the density of PrIZO thin films first increases and then decreases, reaching a maximum of 6.3 $\text{g}\cdot $ cm $^{-{3}}$ at 40 W. With the increasing $\text{O}_{{2}}$ plasma treatment power, the surface roughness of PrIZO thin films first decreases and then increases, achieving a minimum of 0.49 nm at 40 W. The optimized PrIZO TFT exhibits good electric performance with a $\mu _{\text {sat}}$ of 17.9 cm $^{{2}} \cdot \text{V}^{-{1}} \cdot \text{s}^{-{1}}$ , a subthreshold swing (SS) of 0.40 $\text{V}\cdot $ dec $^{-1}$ , a threshold voltage ( ${V}_{\text {TH}}$ ) of −1.1 V, and an ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of 7.4 $\times \,\,10^{{7}}$ ultimately. A novel combined posttreatment incorporating low-temperature annealing and $\text{O}_{\mathbf {2}}$ plasma treatment is proposed and proved promising.

36.1: Invited Paper: High Performance PrIZO Oxide TFTs and the Target Fabrication

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

A study on the high mobility and improved reliability of Pr-doped indium zinc oxide thin film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor

Improvement of PrIZO Thin Films by O$_{\text{2}}$ Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

Performance Enhancement of Fully Transparent Tin-Doped Zinc Oxide Thin-Film Transistors Fabricated by Sputtering at Low Temperature

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

High-performance fully transparent Ti-Zn-O thin film transistors

High-Performance Sputter-Prepared Metal-Oxide Thin-Film Transistors Based on Solution-Processed Targets

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Exploring the Potential of InCp Precursor in Plasma-Enhanced Atomic Layer Deposition for High-Performance IZO-TFTs

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Effect of Pr Concentration and Native Defects on the Structural, Electronic and Optical Properties of Pr Doped IZO by First-Principles Study