Abstract:The proposed μLED pixel circuit utilizes IGZO/Te CFETs, which exhibits symmetrical ambipolar behavior. The IGZO/Te heterostructure is confirmed to consist of an amorphous IGZO layer and a hexagonal Te layer using HR‐TEM and GIXRD. The circuit, based on PWM, achieved 8‐bit gray level control and stable μLED luminance, confirming its suitability for high‐quality μLED displays. This study investigates a micro light‐emitting diode (μLED) pixel circuit using the heterogeneous integration of complementary field‐effect transistors (CFETs). The CFETs are fabricated using a semiconductor layer composed of tellurium (Te) and indium‐gallium‐zinc oxide (IGZO) layers. Te and IGZO layers in the heterostructure IGZO/Te film exhibit hexagonal and amorphous phases, respectively, indicating that each layer maintains independent material characteristics. The fabricated IGZO/Te CFETs exhibit ambipolar behavior with a turn‐on voltage of 2.0 V and field‐effect mobility of 0.74 and 1.42 cm2 V−1 s−1 for p‐type and n‐type channels, respectively. Inverters comprising IGZO/Te CFET and IGZO TFT exhibit inverting behavior. A μLED pixel circuit is designed using IGZO/Te CFETs based on pulse width modulation (PWM). The proposed circuit uses an inverter structure with IGZO/Te and IGZO to control the emission time, suppressing the wavelength shift of μLEDs depending on the μLED current levels. The operation of the proposed pixel circuit is investigated through simulation and measurement of the fabricated circuit. The fabricated μLED pixel circuit successfully exhibits PWM operation, controlling the emission time and luminance. Consequently, IGZO/Te CFETs show promise as devices for high‐quality μLED displays.

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