Abstract:The monolithic photolithograph integration of sub‐5 μm perovskite quantum‐dot (PeQD) pixels is achieved on 0.39‐inch blue‐backlight micro‐LED screens. This integration demonstrates full‐color image and video display capabilities, with remarkable features including brightness exceeding 400 000 nits, an ultra‐high resolution of 3300 PPI, and a wide color gamut of 130.4% NTSC. Monolithic integration of color‐conversion materials onto blue‐backlight micro‐light‐emitting‐diodes (micro‐LEDs) has emerged as a promising strategy for achieving full‐color microdisplay devices. However, this approach still encounters challenges such as the blue‐backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39‐inch micro‐display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer‐scale adhesion of sub‐5 μm QD‐pixels on blue‐backlight micro‐LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high‐efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro‐display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro‐display device, which also lead the road of industrialization process of full‐color micro‐LEDs.

Monolithic 3D mu-LED displays through BEOL integration of large-area MoS2 TFT matrix

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Monolithic 3D sequential integration realizing 1600-PPI red micro-LED display on Si CMOS driver IC

Monolithic Full-Color Micro-LED Displays Featuring Three-Dimensional Chip Bonding and Quantum Dot-Based Color Conversion Layer

MoS2-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays.

High-performance thin-film transistors based on aligned carbon nanotubes for mini- and micro-LED displays

59‐3: Distinguished Paper: Wafer Scale Hybrid Monolithic Integration of Si‐based IC and III‐V Epilayers ‐ a Mass Manufacturable Approach for Active Matrix micro‐LED Displays

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

54‐4: A 142‐in. IGZO‐TFT Glass‐Substrate AM MiniLED Tiled Display with External Compensation and Multilayer Demura Algorithm

P‐9.14: High transparent Active matrix Mini‐LED Full Color Display with IGZO TFT Backplane

Monolithically Integrated μ LEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach

Wafer-scale Organic-on-iii-v Monolithic Heterogeneous Integration for Active-Matrix Micro-Led Displays

Research Progress of Active Matrix Organic Light Emitting Diode (AMOLED) Displays Driven by Metal Oxide Thin Film Transistors (TFT)

Wafer-Level Monolithic Integration of Vertical Micro-LEDs on Glass

Light-Emitting MOS Junction for Ultrahigh-Resolution Quantum Dot Displays

Gate-Last MoS2 Transistors for Active-Matrix Display Driving Circuits

2.3: High Mobility Top‐Gate Self‐Aligned and BCE a‐IGTO TFTs Application to Micro‐LED and Mini‐LED Display

Monolithic High-Performance Micro-Leds Using Planar-Geometry Pixelation Process for High-Resolution Micro-Display Applications

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers

Process optimization of preparing CMOS backplane for ultrahigh pixel density red Micro-LED display

Active matrix monolithic micro‐LED full‐color micro‐display