Abstract:High‐quality c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) semiconductor can be achieved by annealing of a‐IGTO in O2 furnace at 700 °C. The O vacancy‐rich CAAC‐IGTO semiconductor has ferroelectric‐like properties. As a result, synaptic CAAC‐IGTO TFT can mimic the electrical characteristics of biological synapses using a conventional SiO2 gate insulator. Therefore, the CAAC‐IGTO TFTs can be applied to highly integrated neuromorphic electronics. Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this work, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous works use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

Room-temperature-processed Synaptic A-Igzo TFT with High-K HfLaO Gate Dielectric As Neuromodulator

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Sputtered Oxide Thin-Film Transistors With Tunable Synaptic Spiking Behavior at 1 V

Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors with Extensively Tunable Memory Time

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Dough rheology and wet milling of hard waxy wheat flours.

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors

IGZO-based floating-gate synaptic transistors for neuromorphic computing

Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Amorphous indium–gallium–zinc–oxide thin-film transistors using organic–inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

Ultra-thin top-gate insulator of atomic-layer-deposited HfO x for amorphous InGaZnO thin-film transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method