Abstract:Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. In recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.

Investigation of Reflection Anisotropy Induced by Micropipe Defects on the Surface of a 4H-Sic Single Crystal Using Scanning Anisotropy Microscopy

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Numerical simulation research and applications on scattering imaging of surface defects on optical components

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Mapping of Micropipes and Downfalls on 4H-Sic Epilayers by Candela Optical Surface Analyzer

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Asymmetry of Raman Scattering by Structure Variation in Space.

The Acoustic Micro Integrated Detection Technique for Silicon Wafer Processing

Optical Anisotropy in Dislocation-Free Silicon Single Crystals

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Reflectance Difference Spectroscopy Microscope for Circular Defects on InN Films

Guided Wave Imaging of Oblique Reflecting Interfaces in Pipes Using Common-Source Synthetic Focusing

Study of deformation mechanism of structural anisotropy in 4H–SiC film by nanoindentation

Surface Patterning for Multi-Scale Strain Analysis of In-Situ Sem Mechanical Experiments

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

A Feasible Surface Patterning Method for SEM-DIC: Achieving High-Resolution In Situ Mapping of Local Strain and Microstructure to Reveal the Effect of Slip Transfer on Shear Strain Near Grain Boundaries

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers