Abstract:Silicon‐nanomembrane‐based high‐performance field‐effect transistors and capacitors are demonstrated utilizing HfO2/Al2O3 high‐k dielectrics and biodegradable PLGA‐gelatin‐chitosan substrates. The transient devices exhibit high effective mobility, on/off ratio, and on‐state current, which are on par with the highest performance of similar devices. Accelerated soaking tests reveal the dissolution kinetics of the biodegradable devices, which are beneficial for precise control of the functional lifetimes. Emerging transient electronics offer great potential in eco‐friendly and bioresorbable electronic applications. In this study, bendable and biodegradable metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and metal‐oxide‐semiconductor capacitors (MOSCAPs) have been fabricated by integrating HfO2/Al2O3 high‐k bilayers on the transferred silicon nanomembranes (Si NMs) and utilizing PLGA‐gelatin‐chitosan polymeric substrates. The transient n‐channel MOSFETs demonstrate high effective mobility of 871 cm2 V−1 s−1, high on‐state current of 27.6 μA μm−1, high on/off current ratio > 107, and low gate leakage current ≤2.7 × 10−7 A cm−2. The accumulation capacitance of the transient MOSCAPs exceeds 6.5 × 10−7 F cm−2, indicating an enhanced gate control over the Si NM channel. The presented excellent performance is on par with the highest performance of the reported transient devices. Accelerated soaking tests in aqueous environments combined with systematic studies of the electrical characteristics as a function of the transience stage reveal the dissolution chemistry and kinetics of the biodegradable devices associated with the underlying transient behaviors. Moreover, detailed analysis of mechanics provides insights into the optimized device‐grade geometries for precise control of the functional lifetimes. These results will be beneficial to paving a realistic path for achieving high‐performance and on‐demand water‐soluble Si NM based MOSFETs toward futuristic applications in disposable electronics and temporary biomedical implants.

Nanolaminated HfO 2 /al 2 O 3 Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates (adv. Mater. Interfaces 32/2022)

Nanolaminated HfO2/Al2O3 Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates

Geometrical and Chemical-Dependent Hydrolysis Mechanisms of Silicon Nanomembranes for Biodegradable Electronics

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb2O5-Bi2O3-MgO Ceramics As Gate Dielectric on a Plastic Substrate

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Ultrathin, High Capacitance Capping Layers for Silicon Electronics with Conductive Interconnects in Flexible, Long‐Lived Bioimplants

Contemporary treatment strategies for root surface dental caries.

Organic Field-Effect Transistors: Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity (adv. Mater. 12/2015)

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Characterization of High-κ Nanolaminates of HfO 2 and Al 2 O 3 Used As Gate Dielectrics in Pmosfets

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

Fabrication of a Robust In2O3 Nanolines FET Device as a Biosensor Platform

Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates