Abstract:The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics because of the large interfacial capacitance coupling and its ability for high-density charge accumulation. Much effort has recently been devoted to the fundamental understanding and practical applications of such highly charged EDL interfaces. However, the intrinsic nature of the EDL charging, whether it is electrostatics or electrochemistry, and how to distinguish them are far from clear. Here, by combining electrical transport measurements with electrochemical impedance spectroscopy (EIS), we studied the charging mechanisms of highly charged EDL interfaces between an ionic liquid and oxide semiconductor, ZnO. The direct measure for mobile carriers from the Hall effect agreed well with that from the capacitance-voltage integration at 1 Hz, implying that the pseudocapacitance does not contribute to carrier transport at EDL interfaces. The temperature-frequency mapping of EIS was further demonstrated as a "phase diagram" to distinguish the electrostatic or electrochemical nature of such highly charged EDL interfaces with densities of up to 8 × 10(14) cm(-2), providing a guideline for electric-field-induced electronic phenomena and a simple method for distinguishing electrostatic and electrochemical charging in EDLTs not only based on a specific oxide semiconductor, ZnO, but also commonly applicable to all types of EDL interfaces with extremely high-density carrier accumulation.

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Gate Induced Superconductivity in Layered Material Based Electronic Double Layer Field Effect Transistors

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Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids

Ionic Liquid Gated Electric-Double-Layer Transistors Based on Mg-Doped Inn Epitaxial Films

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Liquid-Gated Electric-Double-Layer Transistor On Layered Metal Dichalcogenide, Sns2

Ion-Liquid-Gated KTaO3-Based Electric Double Layer Transistor

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

High-performance $n$-type organic field-effect transistors with ionic liquid gates

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Study of zinc tin oxide thin-film transistor

Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors

Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Field Effect Transistors Based on in Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Room-temperature Fabrication of Ionic Liquid Gated Zn&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;2&lt;/sub&gt; Electric Double Layer Transistors with Non-Degenerate Channel Electron Density