Electrostatic and electrochemical charging mechanisms for electric-double-layer gating media based on a crystalline LaF 3 solid electrolyte
Xi Zhang,Qian Wang,Junwei Huang,Kui Meng,Peng Chen,Ling Zhou,Ming Tang,Caorong Zhang,Xueting Dai,Xiangyu Bi,Caiyu Qiu,Haijun Zhang,Wei-Wei Zhao,Hongtao Yuan
DOI: https://doi.org/10.1063/5.0048951
IF: 6.6351
2021-06-01
APL Materials
Abstract:The electric-double-layer, constituted on the interface between an electronic conductor and an ionic conductor, enables practical applications of electronic devices and electrochemistry. Specifically, the electric-double-layer interfaces have been widely reported to achieve the insulator–metal transition and interfacial superconductivity in field-effect transistors because of the large electric-double-layer capacitance and high carrier density accumulation. Recently, a crystalline LaF<sub>3</sub> solid electrolyte has been shown to be an ideal gate medium candidate for realizing stable electric-double-layer transistors. However, the intrinsic electrostatic and electrochemical mechanisms about LaF<sub>3</sub> electric-double-layer interfaces remain elusive. Here, by combining electrochemical-impedance-spectroscopy with low-temperature technology, we demonstrate the temperature–frequency mapping "phase diagram" for the capacitance and dielectric loss at the LaF<sub>3</sub>/metal interfaces. Two well-distinguished regions correspond to the electrostatic and electrochemical nature, providing a promising guideline for practical device applications based on the crystalline LaF<sub>3</sub> solid electrolyte.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology