Abstract:Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric properties of such materials are strongly intertwined with the voltage-cycling-induced electrical and structural changes, leading to wake-up and fatigue effects. Such field-cycling-dependent behaviors are crucial to evaluate the reliability of HfO2-based functional devices; however, its genuine nature remains elusive. Herein, we demonstrate the coupling mechanism between the dynamic change of the interfacial layer and wake-up/fatigue phenomena in ferroelectric Hf1-xZrxO2 (HZO) thin films. Comprehensive atomic-resolution microscopy studies have revealed that the interfacial layer between the HZO and neighboring nonoxide electrode experienced a thickness/composition evolution during electrical cycling. Two theoretical models associated with the depolarization field are adopted, giving consistent results with the thickening of the interfacial layer during electrical cycling. Furthermore, we found that the electrical properties of the HZO devices can be manipulated by controlling the interface properties, e.g., through the choice of electrode match and hybrid cycling process. Our results unambiguously reveal the relationship between the interfacial layer and field-cycling behaviors in HZO, which would further permit the reliability improvement in HZO-based ferroelectric devices through interface engineering.

Effect of Mobile Ions on Subthreshold Swing of HfO<inf>2</inf>-based Ferroelectric Field-Effect Transistors

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling

Ferroelectric-like Behaviors of Mobile-Ionic Field-Effect Transistors with Amorphous Dielectrics

A Physics-Based Model for Oxide–Semiconductor-Based Ferroelectric Field-Effect Transistors

A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics

Modeling and Simulation of Ionizing Radiation Effect on Ferroelectric Field-Effect Transistor

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films.

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Electric-field-induced Crystallization of Hf0.5Zr0.5O2 Thin Film Based on Phase-Field Modeling

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

Electric-field-induced crystallization of Hf 0.5 Zr 0.5 O 2 thin film based on phase-field modeling

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf 1– x Zr x O 2

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

Impact of the Interfacial Defects in Non-Volatile Mobile-Ionic Field-Effect Transistor with Amorphous ZrO2 Dielectric

Mobile-ionic FETs with Ultra-Scaled Amorphous Dielectric Achieving Ferroelectric Behaviors and Sub-Kt/q Swing with Temperature Down to 77 K

Microscopic Model for the Ferroelectric Field Effect in Oxide Heterostructures

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors