Abstract:Ferroelectric HfO _2 -based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO _2 -based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

Ferroelectric-like Behaviors of Mobile-Ionic Field-Effect Transistors with Amorphous Dielectrics

Mobile Ionic Field Effect Transistors with Amorphous Dielectrics: Device Demonstration and Modeling

Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics

Impact of the Interfacial Defects in Non-Volatile Mobile-Ionic Field-Effect Transistor with Amorphous ZrO2 Dielectric

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors with Steep Subthreshold Swing

Effect of Mobile Ions on Subthreshold Swing of HfO<inf>2</inf>-based Ferroelectric Field-Effect Transistors

Impacts of the Semiconductor Substrates on the Ferroelectric-like Characteristic on Amorphous Dielectric-Based Devices

Mobile-ionic FETs with Ultra-Scaled Amorphous Dielectric Achieving Ferroelectric Behaviors and Sub-Kt/q Swing with Temperature Down to 77 K

Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

ZrO 2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Physical Origin of the Ferroelectric-Type Hysteresis in MIM Structures with Amorphous Dielectric Film

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

Electrical Properties of a PZT Ferroelectric Field Effect Transistor

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

Fabrication And Characteristics Of A Metal/Ferroelectric/Polycrystalline Silicon/Insulator/Silicon Field Effect Transistor

Evidence for Reversible Oxygen Ion Movement During Electrical Pulsing: Enabler of Emerging Ferroelectricity in Binary Oxides

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Fabrication and characteristics of Pb(Zr,Ti)O3 ferroelectric field-effect transistor

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures