Abstract:The interdigital transducer (IDT) of the traditional Mach-Zehnder (MZ) acousto-optic modulator on a silicon-oninsulator (SOI) platform is located outside its two arms. The crest and trough of the surface acoustic wave (SAW) are used to modulate the two arms of the MZ interferometer so as to achieve a high modulation efficiency. Therefore, the distance between the two arms must be odd multiples of half acoustic wavelength. However, since the substrate is usually not uniform, the wavelength of the SAW changes as it transmits through the surface of the device. As a result, the exact distance between the two arms is difficult to choose. On the other hand, the SAW losses a portion of energy after passing through the first arm of the MZ interferometer, so the modulation of the second arm becomes much weaker. To solve these problems, we propose a new structure where its IDT is situated in the middle of the two arms of the MZ interferometer. With this scheme, the two arms of the MZ interferometer are located exactly at the crest and the trough of the SAW, while they are modulated with equal strength. In this paper, we first use the finite element method to simulate the acoustic frequency and the surface displacement of the excited SAW. Then we deduce the refractive index variations of all layers according to their acousto-optic effects. After that, we analyze the influences of different factors on the acousto-optic modulation efficiency, including the type and size of waveguide, the thickness of zinc oxide (ZnO) layer, and the area it covers, the number of electrodes, etc. These parameters are accordingly optimized to enhance the modulation efficiency. Modeling result based on COMSOL Multiphysics indicates that when the width of the strip waveguide is 6 mu m, the ZnO layer covers only the area under the IDT and has a thickness of 2.2 mu m, and the number of the electrodes is 50, the effective refractive index variation of the waveguide reaches 4.08 x 10(-4) provided that the amplitude of the driving voltage is 1 V. This value is 12% higher than that of the traditional structure.

Zn O ∕ Si O 2 Microcavity Modulator on Silicon

An improved Mach-Zehnder acousto-optic modulator on a silicon-on-insulator platform

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Surface acoustic wave lasing in a silicon optomechanical cavity

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

Silicon Based Ultra-Compact Modulator with Photonic Crystal

Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing

Acousto-optic modulation based on an AlScN microring resonator for microwave-to-optical conversion

Highly efficient acousto-optic modulation using nonsuspended thin-film lithium niobate-chalcogenide hybrid waveguides

Wideband, Efficient AlScN-Si Acousto-Optic Modulator in a Commercially Available Silicon Photonics Process

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Y-Z cut lithium niobate longitudinal piezoelectric resonant photoelastic modulator

On-chip 7 GHz acousto-optic modulators for visible wavelengths

Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

Surface acoustic waves for acousto-optic modulation in buried silicon nitride waveguides

Electrically driven acousto-optics and broadband non-reciprocity in silicon photonics

Silicon Electro-Optic Modulators Using P-I-n Diodes Embedded 10-Micron-diameter Microdisk Resonators.

Superconducting Acousto-optic Phase Modulator

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response