Research on Special Microwave Effect of Typical RF Electronic Components

Qiwei Li,Wen Cao,Jun Ding,Yu Meng,Xiaoning Yang,Yong Yang,Jing Sun,Chang Zhai,Shiwei Dong,Jinyong Fang
DOI: https://doi.org/10.1109/icmmt58241.2023.10276480
2023-01-01
Abstract:Based on the traditional microwave damage mechanism of RF devices, this paper proposed a special microwave damage theory of RF devices under specific environmental conditions and verifies the correctness of the theory by means of device physical simulation analysis and comparative test verification. The results show that the damage threshold of the same device under the same injection condition is about 4 to 6 dB different in the two typical environments. This research is of reference significance in the field of high power microwave technology.
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