Abstract:Colloidal quantum dots (QDs) with a wide color gamut and high luminescent efficiency are promising for next-generation electronic and photonic devices. However, precise and scalable patterning of QDs without degrading their properties and their integration into commercially relevant devices, such as digitally addressable QD light-emitting diode (QLED) displays, remain challenging. Here, we develop electronically optimized diazirine-based cross-linkers for nondestructive, direct photopatterning of QDs and, ultimately, building the active-matrix QLED displays. The key to the cross-linker design is the introduction of electron-donating substituents that permit the formation of ground-state singlet carbenes for air-stable and benign QD photopatterning. Under ambient conditions, these cross-linkers enable the patterning of heavy metal-free QDs at a resolution of over 13,000 pixels per inch using commercial i-line photolithography. The patterned QD layers fully preserved their optical and optoelectronic properties. Pixelated electroluminescent devices with patterned InP/ZnSe/ZnS QD layers show a peak external quantum efficiency of 15.3% and a maximum luminance of about 40,000 cd m-2, outperforming those made by existing QD patterning approaches. We further show the seamless integration of patterned QLEDs with thin-film transistor circuits and the fabrication of dual-color active-matrix displays. These results underscore the importance of designing photochemistry for QD patterning, and promise the implementation of direct photopatterning methods in manufacturing commercial QLED displays and other integrated QD device platforms.

Low fluorescence crosstalk patterning of quantum dots based on laser drilling and micropore filling

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion.

Microfluidics-based quantum dot color conversion layers for full-color micro-LED display

Inkjet Printed Quantum Dots Color Conversion Layers for Full-Color Micro-LED Displays

In Situ Patterning Perovskite Quantum Dots by Direct Laser Writing Fabrication

Perovskite quantum dot microarrays: In situ fabrication via direct print photopolymerization

Enhanced photoluminescence of a microporous quantum dot color conversion layer by inkjet printing

Nondestructive Direct Patterning of Both Hole Transport and Emissive Layers for Pixelated Quantum-Dot Light-Emitting Diodes

Fabrication and color conversion of patterned InP/ZnS quantum dots photoresist film via a laser-assisted route

Continuous wave laser fabrication of small pitch/size perovskite pixels realizes high-resolution color conversion micro-LED displays

Flexible Quantum-Dot Color-Conversion Layer Based on Microfluidics for Full-Color Micro-LEDs

Direct Photopatterning of Colloidal Quantum Dots with Electronically Optimized Diazirine Cross-Linkers

Patterning Technologies of Quantum Dots for Color Conversion Micro-LED Display Applications

Full-color micro-LED display with photo-patternable and highly ambient-stable perovskite quantum dot/siloxane composite as color conversion layers

High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking

Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

14.4: Inkjet Printing Patterned Quantum Dot Microarrays

High-Resolution Multicolor Patterning of InP Quantum Dot Films by Atomic Layer Deposition of ZnO

High-Resolution Patterning of Perovskite Quantum Dots via Femtosecond Laser-Induced Forward Transfer

Optical Crosstalk Reduction in Quantum-Dot-Based Full-Color Micro-LED Display by Lithographic-Fabricated Photoresist Mold

Ligand-Enhanced Neodymium Doping of Perovskite Quantum Dots for Superior Exciton Confinement