Abstract:Nondestructive and direct photolithography‐based quantum dot (QD) film patterning is successfully done by employing a sulfonic group‐free photoresist. Previously, Cd‐based QD film is patterned by typical photolithography, but InP‐based QD film shows significant photoluminescence (PL) quenching during the patterning process. PL intensity of atomic layer deposited ZnO‐coated QD film is not significantly affected when the photoresist is coated. Colloidal quantum dot‐based light‐emitting diodes (QD‐LEDs) are one of the potential future self‐emissive displays owing to their large‐scale solution‐processibility and high color purity. For the industrial application of QD‐LEDs, high‐performance QD‐LED and high‐resolution patterning of quantum dot (QD) films are required. Photolithography is an ideal tool for patterning QD films. Previously, the high‐resolution patterning of QD films using direct photolithography by ultra‐thin atomic layer deposition of ZnO on the QD surface is reported. The patterning process is acceptable for Cd‐based QD films, but the photoresist severely deteriorates the photoluminescence (PL) intensity of InP‐based QD films owing to the presence of sulfonic groups in the photoactive compound. Herein, a non‐destructive direct photolithography process for QD film patterning using a negative photoresist that does not affect the PL intensities of Cd‐ and InP‐based QD films is reported. The effect of the photoresist is also verified by a PL lifetime study. Extremely bright Cd‐ and InP‐based QD films are successfully patterned using a softer photoresist, and micropatterning of InP‐based QD films is reported for the first time in this work using photolithography. A QD electroluminescence device is also successfully fabricated using the patterning method.

Fabrication and color conversion of patterned InP/ZnS quantum dots photoresist film via a laser-assisted route

High-Resolution Multicolor Patterning of InP Quantum Dot Films by Atomic Layer Deposition of ZnO

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion.

Synthesis of SiO2-coated CdSe/ZnS quantum dots using various dispersants in the photoresist for color-conversion micro-LED displays

P‐71: Inkjet‐Printed Quantum Dots Photoresist Light Converting Layer and Photolithography Pixel Patterning for Micro‐Displays

Ligand-Enhanced Neodymium Doping of Perovskite Quantum Dots for Superior Exciton Confinement

Enhanced photoluminescence of a microporous quantum dot color conversion layer by inkjet printing

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

17.5: Fabrication of CdSe/ZnS Quantum Dot Color Filters Via Photolithography Process

Direct Photopatterning of Colloidal Quantum Dots with Electronically Optimized Diazirine Cross-Linkers

Color-tunable Optical Properties of Cadmium-Free Transition Metal Ions Doped InP/ZnS Quantum Dots

Development of Quantum Dot (QD) Based Color Converters for Multicolor Display

Quantum-Dot Blue Light Emitting Diodes Utilizing Organic/Inorganic Hybrid Structures

Patterning Technologies of Quantum Dots for Color Conversion Micro-LED Display Applications

Quantum Dots Photoresist for Direct Photolithography Patterning

High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

Application of InP Quantum Dot film by Photolithography Technology on a Micro-LED Display

Nondestructive Direct Photolithography for Patterning Quantum Dot Films by Atomic Layer Deposition of ZnO

A Hierarchical Structure Perovskite Quantum Dots Film for Laser‐Driven Projection Display

Inkjet Printed Uniform Quantum Dots As Color Conversion Layers for Full-Color OLED Displays.

Inkjet Printed Quantum Dots Color Conversion Layers for Full-Color Micro-LED Displays