Abstract:Group III–V semiconductor‐based microscale light‐emitting diode (micro‐LED) displays are recognized as one of the most promising display technologies with superhigh brightness and resolution, strong contrast, and superlarge color gamut but currently suffer from low efficiency, low production yield, and high cost. Here, it is proposed to realize cost‐effective and full‐color micro‐LED displays by using microscale perovskite quantum dot LEDs (micro‐PeLEDs) as emitters. Bright and uniform red‐, green‐, and blue‐emitting (RGB) micro‐PeLED arrays with each pixel size as small as 45 µm are fabricated by in situ inkjet printing a perovskite quantum dot (PeQD) emissive layer in the structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS)/poly(9‐vinylcarbazole) (PVK)/sodium dodecyl sulfate (SDS)/PeQD/1,3,5‐tris(1‐phenyl‐1H‐benzimidazol‐2‐yl)benzene (TPBi)/LiF/Al. These RGB micro‐PeLED arrays display an external quantum efficiency of 0.832%, 0.419%, and 0.052% for red, green, and blue colors, a resolution of 210 PPI, and a wide color gamut (135% of the National Television Standards Committee standard). The authors further demonstrate flexible and full‐color active‐matrix micro‐PeLED displays, which have potential applications in future ultrahigh‐definition displays, light communication, and artificial intelligence. Microscale perovskite quantum dot light‐emitting diodes (micro‐PeLEDs) are fabricated through an “interface engineering‐inkjet printing‐plasma etching” strategy using perovskite quantum dot arrays as the emissive layer for full‐color displays with the advantages of low cost, free massive transfer, high resolution, and suitability for large‐area or flexible displays. This provides a new approach for the development of micro‐LEDs.

Full-color micro-LED display with photo-patternable and highly ambient-stable perovskite quantum dot/siloxane composite as color conversion layers

Microfluidics-based quantum dot color conversion layers for full-color micro-LED display

Flexible Quantum-Dot Color-Conversion Layer Based on Microfluidics for Full-Color Micro-LEDs

Full‐Color Micro‐LED Display with CsPbBr3 Perovskite and CdSe Quantum Dots As Color Conversion Layers

Inkjet Printed Quantum Dots Color Conversion Layers for Full-Color Micro-LED Displays

Full-Colour Quantum Dot Displays Fabricated by Transfer Printing

Full-color micro-LED displays with cadmium-free quantum dots patterned by photolithography technology

Continuous wave laser fabrication of small pitch/size perovskite pixels realizes high-resolution color conversion micro-LED displays

Quantum Dot Film Patterning on a Trenched Glass Substrate for Defining Pixel Arrays of a Full-color Mini/Micro-LED Display

Synthesis of SiO2-coated perovskite quantum dots for micro-LED display applications

Stable colour conversion layer with enhanced conversion efficiency by incorporating nanoparticles for micro-LED display application

Red quantum-dot common layer for organic-quantum-dot hybrid light-emitting diodes for full-color displays

Waterproof Flexible InP@ZnSeS Quantum Dot Light‐Emitting Diode

Microscale Perovskite Quantum Dot Light‐Emitting Diodes (Micro‐PeLEDs) for Full‐Color Displays

Photolithographic Patterning of Perovskite Thin Films for Multicolor Display Applications

Red and Green Quantum Dot Color Filter for Full-Color Micro-LED Arrays

P‐71: Inkjet‐Printed Quantum Dots Photoresist Light Converting Layer and Photolithography Pixel Patterning for Micro‐Displays

Monolithic Integration of Full‐Color Microdisplay Screen with Sub‐5 μm Quantum‐Dot Pixels

Synthesis of SiO2-coated CdSe/ZnS quantum dots using various dispersants in the photoresist for color-conversion micro-LED displays

Enhancing the Efficiency of Color Conversion Micro-LED Display with a Patterned Cholesteric Liquid Crystal Polymer Film

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion.