Quaternary Copolymerized Polyimides and Negative Photosensitive Polyimide: Preparation and Properties

Jiahao Wu,Shiyang Zhang,Mingwei Cai,Qingling Li,Zhi Wang,Xiaochuang Lu,Yonggang Min
DOI: https://doi.org/10.1177/09540083231195528
IF: 1.73
2023-01-01
High Performance Polymers
Abstract:Photosensitive polyimide (PSPI) have been developed base on polyimide (PI). PSPI can be used as insulating and protective materials in the microelectronics industry due to the excellent insulating properties, thermal stability, and chemical stability. In this work, we designed a synthetic method to improve the regularity of the polymer chain segment sequence. Quaternary block copolymerized precursors were prepared using condensation polymerization of poly (acid amid). A photosensitive poly (acid amid) salts (co-PAS) was also synthesized to produce patterns with photochemical reaction. After imidization, the resolution of copolymerized PSPI (co-PSPI) pattern was in the range of 16 & mu;m-110 & mu;m. Partial photoreactive cross-linking structure was maintained to improve the thermal stability of co-PSPI. The co-PSPI exhibited higher glass transition temperatures (327.0 & DEG;C-358.8 & DEG;C) than copolymerized PI (307.4 & DEG;C-332.9 & DEG;C). This work provides the study on the synthesis and properties of quaternary copolymerized PI and PSPI.
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