Alkaline‐developable and negative‐type photosensitive polyimide with high sensitivity and excellent mechanical properties using photo‐base generator

Ling‐Ya Tseng,Yan‐Cheng Lin,Chih‐Cheng Kuo,Chun‐Kai Chen,Chuan‐En Wang,Chi‐Ching Kuo,Mitsuru Ueda,Wen‐Chang Chen

DOI: https://doi.org/10.1002/pol.20200409

IF: 3.046

2020-08-16

Journal of Polymer Science

Abstract:Abstract An alkaline developable and negative‐type PSPI with a high sensitivity and excellent mechanical properties based on a poly(amic acid) (PAA) and a photo‐base generator has been developed. The PAA was prepared by the polycondensation of p ‐phenylenediamine (PDA) with an equimolar of 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6‐FDA) and converted thermally to the corresponding polyimide, PI(PDA‐BPDA/6‐FDA). PI(PDA‐BPDA/6‐FDA) showed the high thermal and mechanical properties and the dimensional stability such as the thermal decomposition temperature of 530°C, glass transition temperature of 369°C, linear coefficient of thermal expansion of 28 ppm/K, ultimate tensile strength of 148 MPa, elongation at break of 25% and dielectric constant of 2.8. The PSPI was formulated directly from PAA(PDA‐BPDA/6‐FDA) with a photo‐base generator (PBG), (E)‐3‐(2‐hydroxy‐4‐methoxyphenyl)‐1‐(piperidin‐1‐yl)prop‐2‐en‐1‐one (HMPP) (10 wt% to PAA) and the optimized parameters for photolithographic process were investigated including the PBG content, post‐exposure bake (PEB) temperature, and PEB time. The PSPI based on PAA(PDA‐BPDA/6‐FDA) and HMPP (10 wt% to PAA) showed a sensitivity of 114 mJ/cm 2 and contrast of 1.29 when exposed to 365‐nm light ( i ‐line), post‐exposure baked at 160°C for 5 min, and developed with an aqueous solution of 2.38 wt% tetramethylammonium hydroxide and iso‐propanol. A clear negative 8‐μm features pattern was obtained by contact‐printing and converted into the PI pattern upon heating at 250°C, confirming by scanning electron microscopy and infrared spectroscopy.

polymer science

What problem does this paper attempt to address?

The paper attempts to address the development of a highly sensitive, negative-tone, alkaline-developable photosensitive polyimide (PSPI) with excellent mechanical properties, suitable for use as an insulating layer and flexible substrate in microelectronics manufacturing. Specifically, the research objectives include:

1. **Enhancing Sensitivity**: Developing a PSPI that is sensitive to 365 nm (i-line) light to achieve high-resolution patterning.
2. **Optimizing Mechanical Properties**: Ensuring that the PSPI has high mechanical strength and good flexibility, suitable for applications such as flexible printed circuit boards.
3. **Improving Thermal Stability**: Ensuring that the PSPI maintains good thermal stability and a low thermal expansion coefficient during high-temperature processing to prevent warping, cracking, and delamination from silicon wafers.
4. **Reducing Dielectric Constant and Loss Factor**: Ensuring that the PSPI exhibits good electrical performance in high-frequency applications.

To achieve these goals, researchers used polyamic acid (PAA) and photo base generators (PBG) to prepare the PSPI and improved its performance by optimizing photolithography process parameters (such as PBG content, post-exposure bake temperature, and time). Ultimately, they successfully prepared a PSPI with high sensitivity (114 mJ/cm²) and high contrast (1.29), capable of forming clear negative-tone patterns under 365 nm illumination.